Roles of oxygen and nitrogen in control of nonlinear resistive behaviors via filamentary and homogeneous switching in an oxynitride thin film memristor. Issue 66 (28th June 2016)

• Record Type: Journal Article
• Authors: Shih, Yu-Chuan; Wang, Tsang-Hsuan; Huang, Jian-Shiou; Lai, Chih-Chung; Hong, Ying-Jhan; Chueh, Yu-Lun
• Is Part Of: RSC advances. Volume 6:Issue 66(2016)
• Page Start: 61221
• Page End: 61227
• Publication Date: 2016-06-28
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c6ra12408a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : A TiO x N y thin film, which contains controllable concentrations of oxygen and nitrogen by a single-step reactive sputtering process, exhibiting non-linear I – V behavior, was proposed and demonstrated. Abstract : A TiO x N y thin film, which contains controllable concentrations of oxygen and nitrogen by a single-step reactive sputtering process using a non-symmetric Pt electrode as top electrode and TiN as bottom electrode, exhibiting non-linear I – V behavior, was proposed and demonstrated. A switching model of the non-linear I – V switching was built based on diffusion of oxygen vacancies in the TiO x N y film with different ratios of O and N after the SET process. Effects on the switching relationship between TiO x N y and electrodes were investigated to optimize the best conditions for the non-linear behavior. The origin of the nonlinear property was investigated in detail by changing the compositions of oxygen and nitrogen in the TiO x N y thin film. We believe that these findings would open up opportunities to exploit resistive switching mechanisms and simple memristor stacking in next generation crossbar array applications.