Next‐Generation Memory: Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017). (July 2017)

• Record Type: Journal Article
• Authors: Yoon, Kyung Jean; Kim, Gun Hwan; Yoo, Sijung; Bae, Woorham; Yoon, Jung Ho; Park, Tae Hyung; Kwon, Dae Eun; Kwon, Yeong Jae; Kim, Hae Jin; Kim, Yu Min; Hwang, Cheol Seong
• Is Part Of: Advanced Electronic Materials. Volume 3:Number 7(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-07
• Subjects: 3D crossbar memory -- diode selectors -- crossbar sensing schemes -- rectifying ReRAM -- resistive switching memory; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201770028
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : 3DXP memory has emerged as the most powerful next generation non‐volatile memory. In article number1700152, Cheol Seong Hwang and co‐workers demonstrate a 3DXP memory with double‐layer resistive‐switching random‐access‐memory architecture. The integrated diode shows the highest cell‐selector performance reported to date. A novel sensing scheme optimized for the device structure enhances the feasibility of ultra‐high‐density 3DXP memory realization.