Morphology control of a silicon nitride thick film derived from polysilazane precursor using UV curing and IR heat treatment. (3rd October 2017)

• Record Type: Journal Article
• Authors: Park, Cheong Ho; Joo, Young Jun; Chung, Jun Ki; Han, Young Hwan; Kim, Cheol Jin
• Is Part Of: Advances in applied ceramics. Volume 116:Number 7(2017)
• Page Start: 376
• Page End: 382
• Publication Date: 2017-10-03
• Subjects: Si3N4 -- thick film -- polysilazane -- UV curing -- IR heat treatment; Ceramics -- Periodicals; 620.1405
• DOI: 10.1080/17436753.2017.1339490
• Languages: English
• ISSNs: 1743-6753

Abstract

ABSTRACT: Silicon nitride (Si3 N4 ) has excellent thermo-mechanical properties, and can be used as heat dissipation substrate for various devices. Si3 N4 thin films are generally synthesised by chemical vapour deposition (CVD) or plasma-enhanced CVD. The use of polysilazanes (PSZs) as a precursor to the synthesis of Si3 N4 has attracted significant attention because of their high mouldability and processability. In this study, Si3 N4 thick films were prepared on silicon wafers or aluminium substrates by a spin- or dip-coating liquid PSZ, followed by UV curing and IR heat treatment under various conditions. The effects of the heat treatment conditions on the Si3 N4 thick film surface were analysed by optical microscopy, X-ray diffraction, and scanning electron microscopy. An almost single phase of Si3 N4 was synthesised successfully on the single crystalline silicon with UV curing at 400°C for 30 min and IR heating at 800°C in N2 atmosphere.