Cite
HARVARD Citation
Zhang, H. et al. (n.d.). Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications1. Chemical vapor deposition. 20 (7), pp. 282-290. [Online].
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Zhang, H. et al. (n.d.). Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications1. Chemical vapor deposition. 20 (7), pp. 282-290. [Online].