Bias-Point Calculation and Parameter Extraction Using EKV Compact MOS Model Equation. Issue 1 (2nd January 2017)

• Record Type: Journal Article
• Authors: Sinha, Arun Kumar
• Is Part Of: IETE journal of education. Volume 58:Issue 1(2017)
• Page Start: 42
• Page End: 48
• Publication Date: 2017-01-02
• Subjects: Bias-point -- Compact model -- EKV -- Large signal equation -- NMOSFET -- Parameter extraction -- Threshold voltage; Electrical engineering -- Periodicals; Electronics -- Periodicals; Electrical engineering; Electronics; Periodicals; 621.381
• DOI: 10.1080/09747338.2017.1333466
• Languages: English
• ISSNs: 0970-1664

Abstract

ABSTRACT: The main aim of this tutorial is to apprise readers about parameter extraction and bias-point calculation using Enz–Krummenacher–Vittoz compact metal oxide semiconductor (MOS) model equation. The model equation has been applied to an NMOS (N-channel metal oxide semiconductor) transistor case present on the P-substrate and P-well. Two cases are considered to show parameters extraction and bias-point calculation for a modified/unmodified value of the transistor threshold voltage. After presenting equation simplification for the two cases, different parameter extraction methods are discussed. Then a common drain configuration biased by a resistance is simulated to match by hand-calculated results.