Cite
HARVARD Citation
Bendt, G. et al. (n.d.). Single‐Source Precursor‐Based Deposition of Sb2Te3 Films by MOCVD**1. Chemical vapor deposition. 19 (7), pp. 235-241. [Online].
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Bendt, G. et al. (n.d.). Single‐Source Precursor‐Based Deposition of Sb2Te3 Films by MOCVD**1. Chemical vapor deposition. 19 (7), pp. 235-241. [Online].