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Zhang, Z. et al. (2017). Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate. Solid-state electronics. pp. 39-45. [Online].
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Zhang, Z. et al. (2017). Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate. Solid-state electronics. pp. 39-45. [Online].