Low‐cost high‐quality crystalline germanium based flexible devices. Issue 9 (16th June 2014)

• Record Type: Journal Article
• Authors: Nassar, Joanna M.; Hussain, Aftab M.; Rojas, Jhonathan P.; Hussain, Muhammad M.
• Is Part Of: Physica status solidi. Volume 8:Issue 9(2014:Sep.)
• Page Start: 794
• Page End: 800
• Publication Date: 2014-06-16
• Subjects: germanium -- flexible electronics -- thin films -- CMOS; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201409257
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low‐cost, light‐weight, and multi‐functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal–oxide–semiconductor capacitors (MOSCAPs) with high‐κ/metal gate stack, using a physical vapor deposition (PVD) cost‐effective technique to obtain a high‐quality Ge channel. We report outstanding bending radius ∼1.25 mm and semi‐transparency of 30%. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Abstract : In this Letter the authors present a low‐cost CMOS‐compatible process demonstrating flexible (bending radius of 1.25 mm) and semi‐transparent (30% transmittance) high‐quality crystalline germanium based devices with high performances under mechanical bending conditions.