Dependence of Si/SnO2 Heterojunction Properties on Growth Temperature and Type of Silicon**. Issue 7 (14th September 2013)

• Record Type: Journal Article
• Authors: Maleki, M.; Rozati, Seyed M.
• Is Part Of: Chemical vapor deposition. Volume 19:Issue 7/9(2013:Sep.)
• Page Start: 290
• Page End: 294
• Publication Date: 2013-09-14
• Subjects: Atmospheric pressure (AP)CVD -- Diodes -- Heterojunction -- p‐type Si -- Thin film silicon solar cell; Chemical vapor deposition -- Periodicals; 671.735
• DOI: 10.1002/cvde.201207014
• Languages: English
• ISSNs: 0948-1907

Abstract

Abstract: Polycrystalline pure tin oxide thin films of tetragonal rutile structures are deposited on two kinds of single‐crystal and polycrystalline p‐type Si at three substrate temperatures of 300, 400, and 500 °C. Structural, electrical, and optical properties of these thin films are characterized by X‐ray diffraction (XRD), two‐point probe method, and UV‐vis spectrophotometry, respectively. I–V measurements of these heterojunctions show that the barrier height and series resistance will increase with increasing substrate temperature in single‐crystal Si, while in polycrystalline Si, they will decrease. These heterojunctions are found to be rectifying with a maximum forward‐to‐reverse current ratio of about 1000 in the applied voltage range −4 V to +4 V for single‐crystal Si/SnO2 . Abstract : The effects of substrate temperature and type of substrate on the properties of diodes are investigated. At high temperatures, samples grown on single‐crystal Si have lower resistance than those grown on polycrystalline Si. From XRD patterns, samples grown at higher temperatures are seen to have better crystallinity. From I ‐ V measurements, series resistance and barrier height decrease with increasing substrate temperature in polycrystalline Si/SnO2 diodes, while these parameters increase in single‐crystal Si.