Bulk Rashba Semiconductors and Related Quantum Phenomena. Issue 25 (29th March 2017)

• Record Type: Journal Article
• Authors: Bahramy, Mohammad Saeed; Ogawa, Naoki
• Is Part Of: Advanced materials. Volume 29:Issue 25(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-03-29
• Subjects: Berry's phase -- bulk Rashba effect -- relativistic optical responses -- spin‐orbit interactions -- topological phase transitions; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201605911
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Bithmuth tellurohalides BiTe X ( X = Cl, Br and I) are model examples of bulk Rashba semiconductors, exhibiting a giant Rashba‐type spin splitting among their both valence and conduction bands. Extensive spectroscopic and transport experiments combined with the state‐of‐the‐art first‐principles calculations have revealed many unique quantum phenomena emerging from the bulk Rashba effect in these systems. The novel features such as the exotic inter‐ and intra‐band optical transitions, enhanced magneto‐optical response, divergent orbital dia‐/para‐magnetic susceptibility and helical spin textures with a nontrivial Berry's phase in the momentum space are among the salient discoveries, all arising from this effect. Also, it is theoretically proposed and indications have been experimentally reported that bulk Rashba semiconductors such as BiTeI have the capability of becoming a topological insulator under the application of a hydrostatic pressure. Here, we overview these studies and show that BiTe X are an ideal platform to explore the next aspects of quantum matter, which could ultimately be utilized to create spintronic devices with novel functionalities. Abstract : Bismuth tellurohalides BiTe X ( X = Cl, Br and I) are model examples of bulk Rashba semiconductors, in which the interplay of spin, orbital, and lattice degrees of freedom leads to a giant Rashba spin splitting of the bulk energy bands. Reviewed here are a number of novel quantum phenomena emerging in such systems as a direct result of the bulk Rashba effect. The unique aspects of bulk Rashba semiconductors bring about new possibilities to realize spintronic devices with advanced magnetic, optical, and topological properties.