A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers. Issue 24 (18th April 2017)

• Record Type: Journal Article
• Authors: Pu, Jiang; Fujimoto, Taiyo; Ohasi, Yuki; Kimura, Shota; Chen, Chang‐Hsiao; Li, Lain‐Jong; Sakanoue, Tomo; Takenobu, Taishi
• Is Part Of: Advanced materials. Volume 29:Issue 24(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-04-18
• Subjects: electric double layers -- light‐emitting devices -- p–i–n junction -- transition metal dichalcogenides -- zinc oxide; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201606918
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The light‐emitting device is the primary device for current light sources. In principle, conventional light‐emitting devices need heterostructures and/or intentional carrier doping to form a p–n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light‐emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light‐emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p–i–n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices. Abstract : A versatile and simple approach to realize a light‐emitting device is proposed. The proposed device requires only a semiconductor with two electrodes that are covered with electrolytes. The fabricated transition metal dichalcogenide and zinc oxide devices generate light emission and provide evidence of the formation of a dynamic p–i–n junction and tunneling junction, presenting a versatile technique to develop optoelectronic devices.