Cathodoluminescence study of killer defects in GaN wafers on sapphire substrates. Issue 7 (23rd June 2017)

• Record Type: Journal Article
• Authors: Sekiguchi, Takashi; Lee, Woong; Luo, Xianjia; Kimura, Takashi; Cho, Yujin
• Other Names: Mtchedlidze Teimuraz guestEditor.
• Is Part Of: Physica status solidi. Volume 14:Issue 7(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-06-23
• Subjects: cathodoluminescence -- dislocation -- GaN -- hexagonal pit; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201700054
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract : GaN films grown on sapphire substrates were characterized using cathodoluminescence (CL) to identify killer defects in GaN wafers. Dislocations and two types of hexagonal pit, V‐pits and U‐pits, were observed. The optical properties of these pits were clarified by planar observation. The generation and annihilation of the pits were elucidated from the cross sectional observation. The cross sectional CL image to identify generation and annihilation of pit‐type defects.