Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer. Issue 6 (22nd March 2017)

• Record Type: Journal Article
• Authors: Cheng, Zhi Xiang; Xu, Jing Ping; Liu, Lu; Huang, Yong; Lai, Pui To; Tang, Wing Man
• Is Part Of: Physica status solidi. Volume 214:Issue 6(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-03-22
• Subjects: capacitors -- gate dielectric -- Ge -- HfO2 -- interfaces -- metal‐oxide semiconductors -- nitrided germanate -- passivation; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600974
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Ge metal‐oxide‐semiconductor (MOS) capacitor with YON/LaON, as interface passivation layer (IPL), and HfO2, as gate dielectric, is proposed to take advantage of both the good passivation effect by LaON and the suppressed intermixing between HfO2 and Ge by YON. As a result, superior interfacial and electrical properties are obtained, as compared to samples with only YON or LaON as IPL: high k value (19.5), low interface‐state density (6.64 × 10 11 cm −2 eV −1 ) and oxide‐charge density (−4.18 × 10 12 cm −2 ), small gate leakage current (1.15 × 10 −4 A cm −2 at V g = V fb + 1 V), and good high‐field reliability. Schematic diagram (a) and C – V curves (b) of the gate stack with YON/LaON dual IPL.