Characterization of HVPE‐grown UV LED heterostructures. Issue 3 (5th March 2014)

• Record Type: Journal Article
• Authors: Kurin, Sergey; Antipov, Andrey; Barash, Iosif; Roenkov, Alexander; Usikov, Alexander; Helava, Heikki; Ratnikov, Valentin; Shmidt, Natalia; Sakharov, Alexey; Tarasov, Sergey; Menkovich, Ekaterina; Lamkin, Ivan; Papchenko, Boris; Makarov, Yuri
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 813
• Page End: 816
• Publication Date: 2014-03-05
• Subjects: hydride vapour phase epitaxy -- nitrides -- light‐emitting diodes -- p‐n junction; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300459
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: In this paper, we report on growth of ultraviolet light‐emitting diode (UV LED) heterostructures by hydride vapour phase epitaxy (HVPE) on sapphire substrates and results of the heterostructures characterization by X‐ray diffractometry, scanning electron microscopy, photo‐ and electroluminescence, micro‐photoluminescence, collected from the cleaved edges and the surface of the heterostructure with lateral resolution of about 1 µm. The heterostructures demonstrate efficient hole injection and low droop of the external quantum efficiency. Packaged 360 nm UV LED chips have wall‐plug efficiency of 1‐1.5%. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)