High temperature stability in non‐polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics. Issue 3 (4th March 2014)

• Record Type: Journal Article
• Authors: Reid, B. P. L.; Zhu, T.; Chan, C. C. S.; Kocher, C.; Oehler, F.; Emery, R.; Kappers, M. J.; Oliver, R. A.; Taylor, R. A.
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 702
• Page End: 705
• Publication Date: 2014-03-04
• Subjects: quantum dots -- non‐polar -- InGaN -- biexciton; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300666
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We report on optical studies of non‐polar InGaN quantum dots grown on the (11$ \bar 2 $ 2) plane. Excitonic and biexcitonic complexes are identified by their power dependence and show similar binding energies (∼ 36 meV) and recombination dynamics to conventional polar (0001) InGaN quantum dots. Measured lifetimes as low as 300 ps suggest a reduced internal electric field when compared with polar InGaN quantum dots. Temperature dependent micro‐photoluminescence measurements on a single exciton with a lifetime of 327ps reveal no significant exciton linewidth broadening up to 120K, suggesting a reduction in phonon coupling strength when compared to polar quantum dots. This is supported by a measured lifetime of 313 ps for this exciton at 77 K, suggesting the measured exciton decay is almost purely radiative. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)