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HARVARD Citation
Wang, B. et al. (n.d.). Characterization of undoped and Si‐doped bulk GaN fabricated by hydride vapor phase epitaxy. Physica status solidi. 11 (3), pp. 573-576. [Online].
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Wang, B. et al. (n.d.). Characterization of undoped and Si‐doped bulk GaN fabricated by hydride vapor phase epitaxy. Physica status solidi. 11 (3), pp. 573-576. [Online].