Cite
HARVARD Citation
Gherasoiu, I. et al. (n.d.). InGaN doping for high carrier concentration in plasma‐assisted molecular beam epitaxy. Physica status solidi. 11 (3), pp. 381-384. [Online].
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Gherasoiu, I. et al. (n.d.). InGaN doping for high carrier concentration in plasma‐assisted molecular beam epitaxy. Physica status solidi. 11 (3), pp. 381-384. [Online].