Cite
HARVARD Citation
Cordier, Y. et al. (n.d.). GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers. Physica status solidi. 11 (3), pp. 498-501. [Online].
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Cordier, Y. et al. (n.d.). GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers. Physica status solidi. 11 (3), pp. 498-501. [Online].