Non‐polar GaN quantum dots integrated into high quality cubic AlN microdisks. Issue 3 (22nd January 2014)

• Record Type: Journal Article
• Authors: Bürger, M.; Callsen, G.; Kure, T.; Hoffmann, A.; Pawlis, A.; Reuter, D.; As, D. J.
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 790
• Page End: 793
• Publication Date: 2014-01-22
• Subjects: GaN -- microdisk -- quantum dots -- molecular beam epitaxy; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300411
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We report on lasing of non‐polar GaN quantum dots which are integrated into novel cubic AlN microdisks. Optical spectroscopy of freestanding microdisks at low temperature (∼10 K) revealed distinct whispering gallery modes with quality factors up to Q ∼3000 in the high energy range around ∼4 eV of microdisks with a diameter of 4 µm. Furthermore, we obtained S‐shaped curves of the integral mode intensity, accompanied by a significant linewidth narrowing in power dependent micro‐photoluminescence experiments. The spontaneous emission coupling factors were determined to β = 0.26 and β = 0.58 with respect to the radial order of the resonator modes. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)