Ferromagnetism and structural defects in V‐doped titanium dioxide. Issue 5 (31st March 2014)

• Record Type: Journal Article
• Authors: Yildirim, O.; Butterling, M.; Cornelius, S.; Mikhailovskiy, Yu.; Novikov, A.; Semisalova, A.; Orlov, A.; Gan'shina, E.; Perov, N.; Anwand, W.; Wagner, A.; Potzger, K.; Granovsky, A. B.; Smekhova, A.
• Other Names: Zhukov Arcady sponsoringEditor.; Hildebrandt Stefan sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 5/6(2014:May)
• Page Start: 1106
• Page End: 1109
• Publication Date: 2014-03-31
• Subjects: diluted magnetic semiconductors -- defect‐induced ferromagnetism -- doped TiO2 -- PAS; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300722
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We report recent experimental results about influence of negatively charged structural defects on room‐temperature ferromagnetism in V‐doped TiO2‐δ thin films with different electric conductivities. Films were prepared on LaAlO3 (001) substrates by RF magnetron sputtering in reduced argon‐oxygen atmosphere, while the V to Ti metal ratio was fixed at 1 at.%. The ferromagnetic order at room temperature (RT) was confirmed by SQUID magnetometry. Positron annihilation spectroscopy (PAS) was applied to check the presence of open‐volume defects in the TiO2–δ matrix. The relation between ferromagnetic properties and amount of negatively charged defects in the studied films was established. The collection of structural, magnetometry, magnetotransport, magneto‐optic and PAS data hints towards the defect‐induced model of ferromagnetism in 1 at.% V‐doped TiO2–δ thin films. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)