Tuning the Electronic Properties of Piezoresistive Bilayer Films Based on α‐(BEDT‐TTF)2I3. Issue 24 (24th June 2014)

• Record Type: Journal Article
• Authors: Lebedev, Victor; Laukhina, Elena; Laukhin, Vladimir; Rovira, Concepció; Veciana, Jaume
• Other Names: Ouahab Lahcène sponsoringEditor.; Mori Takehiko sponsoringEditor.
• Is Part Of: European journal of inorganic chemistry. Issue 24(2014)
• Page Start: 3927
• Page End: 3932
• Publication Date: 2014-06-24
• Subjects: Organic metals -- Thin films -- Sensors -- Conducting materials -- Molecular electronics -- Sulfur heterocycles; Chemistry, Inorganic -- Periodicals; Organometallic chemistry -- Periodicals; Bioinorganic chemistry -- Periodicals; Solid state chemistry -- Periodicals; 546
• DOI: 10.1002/ejic.201402276
• Languages: English
• ISSNs: 1434-1948

Abstract

Abstract: We present a study of the influence of the iodine/solvent annealing temperature on the properties of piezoresistive bilayer films with layers of α‐(BEDT‐TTF)2 I3 [BEDT‐TTF = bis(ethylenedithio)tetrathiafulvalene]. The formation of the conductive layers was tested by XRD, direct current (dc) conductivity measurements, and SEM, and the electromechanical properties have also been studied. We demonstrate that it is possible to form bilayer (BL) films with an invariant gauge factor of ca. 10 but with the temperature dependence of the resistance variable from metallic to semiconductor‐like by control of the annealing temperature. This control even permits the preparation of a BL film with temperature‐independent resistance. Abstract : The electrical properties of the conducting layer of piezoresistive all‐organic flexible bilayer films are fine tuned without changing their high strain sensitivity.