Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films. Issue 23 (16th February 2017)

• Record Type: Journal Article
• Authors: Prakash, Abhinav; Xu, Peng; Wu, Xuewang; Haugstad, Greg; Wang, Xiaojia; Jalan, Bharat
• Is Part Of: Journal of materials chemistry. Volume 5:Issue 23(2017)
• Page Start: 5730
• Page End: 5736
• Publication Date: 2017-02-16
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c7tc00190h
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Adsorption-controlled growth and strong charge compensation accompanied by decreased electron mobility due to cation non-stoichiometry was discovered in epitaxial BaSnO3 films using a hybrid MBE approach. Abstract : High room-temperature electron mobility and optical transparency in the visible spectrum distinguishes BaSnO3 from other perovskite oxides. The origin of low mobility in thin films as compared to their bulk counterpart is attributed to the presence of dislocations in films with nearly no discussion on the role of point defects such as cation non-stoichiometry. Using high-resolution X-ray diffraction, Rutherford backscattering spectrometry, thermal, and electronic transport measurements, we show that a growth window, in which cation stoichiometry is self-regulating, can be achieved for BaSnO3 films on SrTiO3 (001) and (La0.3 Sr0.7 )(Al0.65 Ta0.35 )O3 (001) (LSAT) substrates using a hybrid molecular beam epitaxy approach. BaSnO3 films on SrTiO3 grown within the growth window yielded a mobility value of 105 cm 2 V −1 s −1 at a density, 2.5 × 10 20 cm −3 . Bulk-like thermal conductivity of 13.3 ± 1.46 W m −1 K −1 was achieved for stoichiometric films. Both Ba- and Sn-deficient films resulted into charge compensation and low mobility, with a stronger dependence for Sn-deficient films.