Size effect caused significant reduction of thermal conductivity of GaAs/AlAs distributed Bragg reflector used in semiconductor disk laser. (1st November 2017)

• Record Type: Journal Article
• Authors: Zhang, Peng; Zhu, Renjiang; Jiang, Maohua; Song, Yanrong; Zhang, Dingke; Cui, Yuting
• Is Part Of: Optics & laser technology. Volume 96(2017)
• Page Start: 259
• Page End: 264
• Publication Date: 2017-11-01
• Subjects: Semiconductors disk laser -- Thermal conductivity -- Equilibrium molecular dynamics simulation -- Distributed Bragg reflector; Optics -- Periodicals; Lasers -- Periodicals; Electronic journals; 621.366
• DOI: 10.1016/j.optlastec.2017.05.018
• Languages: English
• ISSNs: 0030-3992

Abstract

Highlights: Thermal conductivities of DBR and nanoscale alloy are studied by EMD method. Thermal conductivity of DBR is significantly small than that of bulk material. DBR's thermal conductivity increases linearly with increasing layer thickness. Thermal conductivity of nanoscale alloy has change trend same as bulk material. Nanoscale AlGaAs's thermal conductivity is about a third of its bulk counterpart. Abstract: Thermal properties of the distributed Bragg reflector (DBR) used in the semiconductor gain element are crucial for the performance of a semiconductor disk laser (SDL). For the purpose of more reasonable semiconductor wafer design, so as to improve the thermal management of SDLs, accurate thermal conductivity value of a DBR is under considerable requirement. By the use of equilibrium molecular dynamics method, thermal conductivities of GaAs/AlAs DBRs, which are widely employed in 1 μm waveband SDLs, are calculated, and simulated results are compared with the reported experimental data. Influences of the layer thickness on the thermal conductivities of the DBR structure and the effects of Al composition on the Alx Ga1−x As ternary alloy values are focused and analyzed.