Wafer‐scale GaN HEMT performance enhancement by diamond substrate integration. Issue 3 (7th February 2014)

• Record Type: Journal Article
• Authors: Via, G. D.; Felbinger, J. G.; Blevins, J.; Chabak, K.; Jessen, G.; Gillespie, J.; Fitch, R.; Crespo, A.; Sutherlin, K.; Poling, B.; Tetlak, S.; Gilbert, R.; Cooper, T.; Baranyai, R.; Pomeroy, J. W.; Kuball, M.; Maurer, J. J.; Bar‐Cohen, A.
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 871
• Page End: 874
• Publication Date: 2014-02-07
• Subjects: GaN/diamond -- thermal resistance -- diamond substrate integration; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300504
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: A wafer‐scale comparison of HEMTs fabricated on as‐grown GaN/Si and HEMTs fabricated in parallel on epitaxial layers from the GaN/Si growth integrated with a diamond substrate are presented. Diamond, which offers the highest room‐temperature thermal conductivity of any bulk material, is being evaluated as a solution for thermal limitations observed in GaN‐based devices. This paper will present electrical and thermal data collected at the wafer scale demonstrating the improvement realized by integration of a high‐thermal‐conductivity substrate. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)