Post‐growth annealing treatment of ZnO nanowires with arsenic and phosphorus sources. Issue 7 (4th April 2014)

• Record Type: Journal Article
• Authors: Zehani, Emir; Hassani, Said; Lusson, Alain; Jomard, François; Galtier, Pierre; Sallet, Vincent
• Is Part Of: Physica status solidi. Volume 11:Issue 7/8(2014:Jul.)
• Page Start: 1221
• Page End: 1224
• Publication Date: 2014-04-04
• Subjects: ZnO nanowires -- metal‐organic chemical vapour deposition -- doping -- photoluminescence; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300648
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: An attempt to incorporate dopants in ZnO nanowires grown using metal organic chemical vapour deposition (MOCVD) on sapphire substrates is presented. Diffusion of phosphorus (P) and arsenic (As) into the ZnO nanowires and ZnO substrates were carried out in vacuum sealed ampoules at temperatures ranging from 580 to 800 °C. Doping sources were Zn3 P2 or Zn3 sA2 . The evolution of the wires morphology shows a dramatic degradation above 620–650 °C. SIMS analysis reveals the transport of P and As onto the sample surface. Mass profiling shows that the dopants do not diffuse significantly into bulk ZnO. This is confirmed by both Raman scattering and low temperature photoluminescence (PL) where no optical signatures related to the incorporation of P or As are observed. Surprisingly, PL experiments performed on nanowires processed at a temperature where the effect of annealing on the morphology start to be visible show an improved quality, and features commonly observables in high quality bulk samples. These results suggest that defects localised at the surface of the ZnO nanowires could be removed using post‐annealing in Zn rich atmosphere. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)