Ultra‐thin barrier quaternary InAlGaN HEMTs with state of the art sheet resistance. Issue 3 (20th March 2014)

• Record Type: Journal Article
• Authors: Gao, Xiang; Pan, Ming; Gorka, Daniel; Oliver, Mark; Schuette, Michael; Ketterson, Andrew; Saunier, Paul
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 495
• Page End: 497
• Publication Date: 2014-03-20
• Subjects: InAlN -- InAlGaN quaternary MOCVD; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300669
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We report transport properties measured from quaternary barrier InAlGaN high electron mobility transistor wafers on SiC substrates. With similar barrier thicknesses, higher mobility and sheet charge density were both demonstrated by a strained barrier quaternary In0.07 Al0.75 Ga0.18 N HEMT comparing to a ternary In0.17 Al0.83 N HEMT with lattice matched barrier to the GaN buffer. With 1 nm AlN interlayer, sheet resistances of 218 Ω/□ and 228 Ω/□ were obtained from 4.8 nm and 4.4 nm barrier structures, respectively. Both structures also show excellent electron motilities. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)