High‐efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer. Issue 3 (17th February 2014)

• Record Type: Journal Article
• Authors: Zou, Xinbo; Wong, Ka Ming; Chong, Wing Cheung; Ma, Jun; Lau, Kei May
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 730
• Page End: 733
• Publication Date: 2014-02-17
• Subjects: GaN -- LEDs -- blue -- green -- buffer; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300506
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: High‐efficiency blue and green light‐emitting diodes (LEDs) were grown on planar Si substrates using a 5 µm thick GaN buffer by metalorganic chemical vapor deposition (MOCVD). AlN/GaN superlattices (SLs)–based interlayers were inserted twice for stress balancing and dislocation reduction. Smooth surface and low dislocation density of 1 × 109 cm –2 were achieved. The light output power (LOP) of bare 300 × 300 µm2 447 nm–LEDs and 510 nm–LEDs on Si was measured to be 2.15 mW and 0.85 mW at 20 mA, respectively. At –15 V, leakage current of as low as 3 µA was achieved for 447 nm–LEDs while higher leakage current was measured for green LEDs. After Si substrate removal, the LOP of packaged 440 nm– and 500 nm–LEDs reached 8.50 mW and 4.85 mW at 20 mA, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)