A high‐power, broadband 245–285 GHz balanced frequency doubler in 45 nm SOI CMOS. Issue 2 (February 2016)

• Record Type: Journal Article
• Authors: Abbasi, Morteza; Ricketts, David S.
• Is Part Of: Microwave and optical technology letters. Volume 58:Issue 2(2016:Feb.)
• Page Start: 423
• Page End: 426
• Publication Date: 2016-02
• Subjects: G‐band; balanced frequency doubler; 45 nm SOI CMOS; marchand balun; Microwaves -- Periodicals; Optics -- Periodicals; 621
• DOI: 10.1002/mop.29586
• Languages: English
• ISSNs: 0895-2477

Abstract

ABSTRACT: A compact, broadband balanced frequency doubler that achieves state‐of‐the‐art output power with a usable bandwidth of over 40 GHz (245–285 GHz) has been presented. This wide bandwidth is twice that of previously published CMOS doublers from 140 to 340 GHz, enabling emerging applications in wide bandwidth communication and radar at sub‐THz frequencies. The doubler is designed and fabricated in a 45 nm SOI CMOS technology with an effective area of only 0.12 mm 2 . The frequency doubler exhibits −15 ± 1.5 dB conversion loss over 40 GHz bandwidth and can provide as high as 200 μW power while consuming 19 ± 1 mW dc power from a 1.1 V supply. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:423–426, 2016