Cite
HARVARD Citation
Gao, F. et al. (2017). Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms. Small. 13 (21), p. n/a. [Online].
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Gao, F. et al. (2017). Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms. Small. 13 (21), p. n/a. [Online].