MIT virtual source GaNFET‐high voltage (MVSG‐HV) model: A physics based compact model for HV‐GaN HEMTs. Issue 3 (5th March 2014)

• Record Type: Journal Article
• Authors: Radhakrishna, Ujwal; Imada, Tadahiro; Palacios, Tomás; Antoniadis, Dimitri
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 848
• Page End: 852
• Publication Date: 2014-03-05
• Subjects: GaN HEMTs -- compact modeling -- high‐voltage -- access regions; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300392
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: A new physics based transport and charge model for long channel GaN HEMTs is proposed. The model is based on the concept of virtual source (VS) carrier transport (A. Khakifirooz et al., IEEE‐TED56 (8), 1674 (2009) [1]) and is extended to drift diffusion regime. The model is fully scalable from non‐velocity saturation to velocity saturation regime. In addition, non‐linear access regions are modeled as implicit‐gated transistors. Self‐heating effects and self‐consistent charge models are included. The model is validated against state of the art industry devices. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)