Self‐aligned gate‐last enhancement‐ and depletion‐mode AlN/GaN MOSHEMTs on Si. Issue 3 (17th February 2014)

• Record Type: Journal Article
• Authors: Huang, Tongde; Ma, Jun; Lu, Xing; Liu, Zhao Jun; Zhu, Xueliang; Lau, Kei May
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 890
• Page End: 893
• Publication Date: 2014-02-17
• Subjects: AlN/GaN MOSHEMT -- self‐aligned gate‐last -- enhancement‐/depletion‐mode -- interface fixed charge; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300493
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: This paper demonstrates the fabrication of self‐aligned gate‐last enhancement‐ and depletion‐mode (E/D‐mode) AlN/GaN metal‐oxide‐semiconductor high‐electron‐mobility‐transistors (MOSHEMTs). In addition, the effects of annealing on threshold voltage ( V th ) are analyzed. The E and D‐mode transistors were fabricated with Ni/Au and Ti/Au as the gate metal, respectively. The Ni/Au gated MOSHEMTs show V th = +0.3 V after post‐gate metallization annealing, and the Ti/Au gated MOSHEMTs without annealing show V th = ‐1.8 V. In the E‐mode (Ni/Au gated) transistors, the V th shift after post‐gate annealing is due to the decrease of fixed charges at the Al2 O3 /GaN interface. An investigation has been conducted for the understanding of the V th shift, which is crucial for improving the transistors' stability in various applications. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)