Beyond intervalley transfer: damped Bloch oscillation and negative differential drift velocity at very high fields in wide bandgap III‐nitride materials. Issue 3 (19th March 2014)

• Record Type: Journal Article
• Authors: Yoder, P. Douglas; Sridharan, Sriraaman
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 879
• Page End: 882
• Publication Date: 2014-03-19
• Subjects: negative differential resistance -- Bloch oscillation -- wide bandgap semiconductors -- high field charge transport; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300449
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: We present evidence for a new mode of charge transport at very high fields in gallium nitride (GaN) and related wide bandgap materials, based on the phenomenon of damped Bloch oscillation. Entirely new solutions of the Boltzmann transport equation (BTE) are developed to describe the microscopic physics of damped Bloch oscillation, which is shown to lead to negative differential drift velocity in bulk material. Bloch transport in bulk GaN is confirmed by full band Monte Carlo simulation. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)