Electronic structures of ternary‐layered semiconductor TlGaSe2 investigated by photoemission spectroscopy. Issue 7 (13th May 2013)

• Record Type: Journal Article
• Authors: Motonami, Satoru; Mimura, Kojiro; Shim, YongGu; Wakita, Kazuki; Sato, Hitoshi; Utsumi, Yuki; Ueda, Shigenori; Nakatake, Masashi; Shimada, Kenya; Taguchi, Yukihiro; Kobayashi, Keisuke; Namatame, Hirofumi; Taniguchi, Masaki; Orudzhev, Guseyn; Mamedov, Nazim
• Is Part Of: Physica status solidi. Volume 10:Issue 7/8(2013:Aug.)
• Page Start: 1001
• Page End: 1004
• Publication Date: 2013-05-13
• Subjects: TlGaSe2 -- electronic structure -- hard X‐ray photoemission spectroscopy -- soft X‐ray photoemission spectroscopy; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201200863
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: Electronic structures of the ternary‐layered semiconductor TlGaSe2 have been investigated by hard and soft X‐ray photoemission spectroscopies (HAXPES and SXPES). The spectral shape of all core levels obtained from HAXPES and SXPES can be represented by a symmetric Lorentzian, reflecting the semiconducting nature of TlGaSe2 . Peak positions of the same bulk components, obtained from HAXPES and SXPES, are almost the same. This suggests that the recoil effect is ignorable for TlGaSe2 and that the HAXPES spectra of this material provide us the information on the intrinsic bulk electronic structures. The valence‐band HAXPES spectrum is composed of two main features and is well reproduced by the theoretical calculation. The estimated value of 2.0 eV for the energy gap is consistent with the results from the optical measurements. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)