Freestanding single crystal AlN layers grown using the SiC substrate evaporation method. Issue 23 (1st June 2017)

• Record Type: Journal Article
• Authors: Mokhov, E. N.; Argunova, T. S.; Je, J. H.; Kazarova, O. P.; Shcherbachev, K. D.
• Is Part Of: CrystEngComm. Volume 19:Issue 23(2017)
• Page Start: 3192
• Page End: 3197
• Publication Date: 2017-06-01
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c7ce00569e
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : In this paper, we show that the rate of SiC evaporation is slow in a narrow process window for AlN growth but increases in the presence of AlN vapor. Abstract : The physical vapor transport growth of aluminium nitride (AlN) layers was performed in one process with the evaporation of silicon carbide (SiC) substrates. In this paper, we show that the rate of SiC evaporation is slow in a narrow process window for AlN growth but increases in the presence of AlN vapor. The properties of the substrates influence the evaporation process; therefore an investigation is done to understand this phenomenon. We first describe the evaporation behavior of a SiC substrate depending on its size, thickness, structure and polarity. Then we demonstrate the surface morphology and structural quality of the AlN layers grown on C-polar SiC. In the case of a step-flow growth, our method allows us to obtain thin freestanding layers with moderate dislocation densities and rocking curve widths comparable to those of bulk crystals.