Extremely uniform epitaxial growth of graphene from sputtered SiC films on SiC substrates. (20th December 2016)

• Record Type: Journal Article
• Authors: Mitsuhashi, Fuminori; Okada, Masaya; Tateno, Yasunori; Nakabayashi, Takashi; Ueno, Masaki; Nagasawa, Hiroyuki; Fukidome, Hirokazu; Suemitsu, Maki
• Is Part Of: MRS advances. Volume 2:Number 1(2017)
• Page Start: 51
• Page End: 56
• Publication Date: 2016-12-20
• Subjects: nanostructure, -- crystal growth, -- transmission electron microscopy (TEM); Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2016.635
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: A novel method to fabricate uniform epitaxial graphene on C-face SiC substrates was investigated. Graphene was grown on the C-face 6H-SiC substrates with a sputtered SiC film by annealing temperatures ranging from 1400 to 1900 °C under an Ar ambient. The fractional area of the graphene having the layer number of two was about 95% in a 75×75 μm square by a Raman mapping and a low energy electron microscopy. Graphene on the C-face SiC fabricated by this method is quite uniform compared to that made by a conventional method without the sputtered SiC films and is thus suitable for high frequency analog devices.