Analysis of grit interference mechanisms for the double scratching of monocrystalline silicon carbide by coupling the FEM and SPH. (September 2017)

• Record Type: Journal Article
• Authors: Duan, Nian; Yu, Yiqing; Wang, Wenshan; Xu, Xipeng
• Is Part Of: International journal of machine tools & manufacture. Volume 120(2017)
• Page Start: 49
• Page End: 60
• Publication Date: 2017-09
• Subjects: Interference mechanism -- Double scratching -- Coupled FE and SPH method -- Distance of two diamond grits in the Y-direction; Machine-tools -- Periodicals; Manufacturing processes -- Periodicals; Machines-outils -- Périodiques; Fabrication -- Périodiques; Electronic journals; 621.902
• DOI: 10.1016/j.ijmachtools.2017.04.012
• Languages: English
• ISSNs: 0890-6955

Abstract

Abstract: Three-dimensional twice scratching and double scratching of monocrystalline silicon carbide with two cone-shaped grains were simulated by coupling the finite element (FEM) and smoothed particle hydrodynamics (SPH) to resolve the mesh distortion problem caused by using the FEM. Twice-scratching experiments were performed under three different conditions to validate the coupled finite element (FE) and SPH model in the scratching simulation with two diamond grits. The experimental results were compared to the simulation results. For twice scratching, the simulation results conform with the experimental results, indicating the validity of the coupled FE and SPH model. Thus, the coupled FE and SPH model was used to simulate the double-scratching process under different conditions. The results of the double-scratching simulation showed that the interference damages in the scratching process occurred under three circumstances: the interference of lateral cracks, the interference of lateral cracks and plastic damage, and the interference of plastic damage. The influence of distance on the interference damage of the two diamond grits in the Y-direction was analysed. The changes in the maximum depth and width in the interference region and the scratching force with the distance of the two grains in the Y-direction are illustrated. Highlights: FE and SPH was utilized to simulate double-scratching of monocrystal SiC. Three interference modes of SiC were illustrated in double-scratching. Interference mechanisms in three interference modes were studied. Interference in double-scratching is more significant than that in twice-scratching. If interference occur between the same material damage, interference will intensify.