Band Gap Dependence on Cation Disorder in ZnSnN2 Solar Absorber. Issue 24 (29th October 2015)

• Record Type: Journal Article
• Authors: Veal, Tim D.; Feldberg, Nathaniel; Quackenbush, Nicholas F.; Linhart, Wojciech M.; Scanlon, David O.; Piper, Louis F. J.; Durbin, Steven M.
• Is Part Of: Advanced energy materials. Volume 5:Issue 24(2015:Dec.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-10-29
• Subjects: band gap -- energy materials -- semiconductors -- thin films -- ZnSnN2; Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201501462
• Languages: English
• ISSNs: 1614-6832

Abstract

Abstract : The band gap of earth‐abundant ZnSnN2 can be tuned between 1 and 2 eV by varying the growth conditions and resulting cation disorder. The optical absorption edges and carrier densities fall between model curves for cation‐ordered orthorhombic and disordered wurtzite ZnSnN2 . Hard X‐ray photo­emission spectra suggest different degrees of cation disorder from comparison with hybrid DFT‐calculated densities of states.