Cite
HARVARD Citation
Jhang, P. et al. (2017). Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition. Solid-state electronics. pp. 10-16. [Online].
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Jhang, P. et al. (2017). Properties of N-rich Silicon Nitride Film Deposited by Plasma-Enhanced Atomic Layer Deposition. Solid-state electronics. pp. 10-16. [Online].