Inelastic relaxation in Gd-doped ceria films: Micro-Raman spectroscopy. (August 2017)

• Record Type: Journal Article
• Authors: Kraynis, Olga; Wachtel, Ellen; Lubomirsky, Igor; Livneh, Tsachi
• Is Part Of: Scripta materialia. Number 137(2017)
• Page Start: 123
• Page End: 126
• Publication Date: 2017-08
• Subjects: Gd-doped ceria -- Anelastic relaxation -- Raman spectroscopy; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2017.02.012
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: Micro-Raman spectroscopy and X-ray diffraction were used to study time-dependent structural changes in sputtered Ce1-x Gdx O2-x/2 films. The F 2 g peak position was measured at five well-defined film locations; X-ray diffraction assessed in-plane compressive strain and unit cell volume. For x = 0.05, at all locations monitored post-annealing, the F 2 g frequency continued to increase during two weeks and for x = 0.10, at 4 of 5 locations during six weeks. This time-dependent behavior is attributed to relaxation of local elastic dipolar strain fields. Raman spectroscopy can properly evaluate strain in thin films of these materials only when mechanical properties, defect structure, temporal and thermal history are considered. Graphical abstract: