GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. (15th July 2017)

• Record Type: Journal Article
• Authors: Chusovitin, E.A.; Goroshko, D.L.; Dotsenko, S.A.; Chusovitina, S.V.; Shevlyagin, A.V.; Galkin, N.G.; Gutakovskii, A.K.
• Is Part Of: Scripta materialia. Number 136(2017)
• Page Start: 83
• Page End: 86
• Publication Date: 2017-07-15
• Subjects: Nanocrystalline materials -- Crystal structure -- Heteroepitaxy -- Transmission electron microscopy -- GaSb; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2017.04.004
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 10 10 cm − 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb 1 1 − 0 ||Si 1 1 − 0 . Graphical abstract: