Selective Growth of Semiconducting Single-Walled Carbon Nanotubes by "In Situ" Methods. (23rd January 2017)

• Record Type: Journal Article
• Authors: Luo, Chengzhi; Pan, Chunxu
• Is Part Of: MRS advances. Volume 2:Number 2(2017)
• Page Start: 109
• Page End: 116
• Publication Date: 2017-01-23
• Subjects: chemical synthesis, -- semiconducting, -- nanostructure; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2017.86
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: Single-walled carbon nanotubes (SWNTs) possess superior electronic properties that make them ideal candidates for making next-generation electronic circuits. However, the commercially available SWNTs that obtained directly from the viable synthesis procedures are the mixtures of semiconducting (s-) and metallic (m-) SWNTs. That shortcoming of present technologies hinders further studies and limits the scalable applications for a series of promising SWNT-based electronics. Separation of the two species is the way to solve the present dilemma. Herein, this review highlights "in situ" approaches towards selective growth of s-SWNT. The methods and techniques used for the enrichment of s-SWNTs are reviewed. Based on the understanding of the growth mechanism of those strategies, we try to propose the general guideline on that how can we develop the optimal method for the growth of s-SWNTs.