Facile synthesis of AlOx dielectrics via mist-CVD based on aqueous solutions. Issue 12 (15th August 2017)

• Record Type: Journal Article
• Authors: Oh, Keun-Tae; Kim, Hyo-yeon; Kim, Dong-hyun; Han, Jeong Hwan; Park, Jozeph; Park, Jin-Seong
• Is Part Of: Ceramics international. Volume 43:Issue 12(2017)
• Page Start: 8932
• Page End: 8937
• Publication Date: 2017-08-15
• Subjects: Mist chemical vapor deposition -- Al(acac)3 -- Aluminum oxide -- Aqueous solution; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2017.04.031
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Aluminum oxide (AlOx ) thin films were synthesized by mist-chemical vapor deposition (mist-CVD) using aluminum acetylacetonate (Al(acac)3 ) dissolved in an aqueous solvent mixture of acetone and water. Nitrogen gas was used to purge the precursor solution and growth rates between 7.5–13.3 nm/min were achieved at substrate temperatures of 250–350 °C. The AlOx layers deposited at temperatures below 350 °C exhibit 3–5 at% residual carbon levels, however those grown at 350 °C exhibit only 1–2 at% carbon impurity. Reasonable dielectric properties were obtained in the latter, with a dielectric constant (κ) of ~ 7.0, breakdown field of ~ 9 MV/cm and relatively low leakage current density of ~ 8.3×10 −10 A/cm 2 .