Analysis of interface states of Al/DNA/p-Si MIS photovoltaic structures with DNA biomolecules using the conductance technique. (3rd July 2017)

• Record Type: Journal Article
• Authors: Güllü, Ö.
• Is Part Of: Materials technology. Volume 32:Number 8(2017)
• Page Start: 505
• Page End: 513
• Publication Date: 2017-07-03
• Subjects: Metal–insulator–semiconductor structures -- sol–gel processing -- biopolymers -- junction diodes -- conductance method; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Technological innovations -- Periodicals; 620.1105
• DOI: 10.1080/10667857.2017.1305640
• Languages: English
• ISSNs: 1066-7857

Abstract

Abstract: In this study, we report on the calculation of interface charge distribution of metal–interlayer–semiconductor (MIS) photovoltaic diodes containing DNA biomolecules and Si semiconductor based on the conductance technique. DNA biofilms were deposited at room temperature using a simple cast method on p-type Si. Interface parameters of the Al/DNA/p-Si structures were investigated by using capacitance–voltage ( C – V ) and conductance–voltage ( G – V ) measurements as a function of frequency. The distributions of interfacial charge states and the trap relaxation times were reported. Also, photoelectric and photocapacitance properties of the diode were measured at room temperature.