Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC. (August 2017)

• Record Type: Journal Article
• Authors: Chua, Cassandra; Lartsev, Arseniy; Sui, Jinggao; Panchal, Vishal; Puddy, Reuben; Richardson, Carly; Smith, Charles G.; Janssen, T.J.B.M.; Tzalenchuk, Alexander; Yakimova, Rositsa; Kubatkin, Sergey; Connolly, Malcolm R.
• Is Part Of: Carbon. Volume 119(2017)
• Page Start: 426
• Page End: 430
• Publication Date: 2017-08
• Subjects: Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2017.04.019
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstract: We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of doping, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type doping close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below T *, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder. Graphical abstract: