Molecular Oligogermanes and Related Compounds: Structure, Optical and Semiconductor Properties. Issue 11 (28th February 2017)

• Record Type: Journal Article
• Authors: Zaitsev, Kirill V.; Tafeenko, Viktor A.; Oprunenko, Yuri F.; Kharcheva, Anastasia V.; Zhanabil, Zhaisan; Suleimen, Yerlan; Lam, Kevin; Zaitsev, Vladimir B.; Zaitseva, Anna V.; Zaitseva, Galina S.; Karlov, Sergey S.
• Is Part Of: Chemistry, an Asian journal. Volume 12:Issue 11(2017)
• Page Start: 1240
• Page End: 1249
• Publication Date: 2017-02-28
• Subjects: luminescence -- oligogermanes -- organic semiconductors -- silagermanes -- X-ray analysis; Chemistry -- Periodicals; 540.5
• DOI: 10.1002/asia.201700151
• Languages: English
• ISSNs: 1861-4728

Abstract

Abstract: The optical (UV/Vis absorbance, fluorescence in the solid state and in solution) and semiconducting properties of a number of di‐ and trigermanes as well as related silicon‐ and tin‐containing germanes, 1 –6 (( p ‐Tol)3 GeGeMe3 (1 ), Ph3 SnGe(SiMe3 )3 (2 ), (C6 F5 )3 GeGePh3 (3 ), ( p ‐Tol)3 GeSiMe2 SiMe3 (4 ), ( p ‐Tol)3 GeGeMe2 Ge( p ‐Tol)3 (5 ), ( p ‐Tol)3 GeSiMe2 SiMe2 Ge( p ‐Tol)3 (6 )) were investigated. Molecular structures of5 and6 were studied by X‐ray diffraction analysis. All compounds displayed luminescence properties. In addition, a band gap (of about 3.3 eV) was measured for compounds 1 –6 showing that those molecules display semiconductor properties. Abstract : Semiconducting molecular oligogermanes : A series of molecular catenated group 14 derivatives was obtained and their structure, optical (UV/Vis absorbance, luminescence) and electrochemical properties were studied. A band gap of about 3.3 eV was measured for such compounds, indicating that these molecules have semiconductor properties.