Triethanolamine doped multilayer MoS2 field effect transistors. Issue 20 (10th May 2017)

• Record Type: Journal Article
• Authors: Ryu, Min-Yeul; Jang, Ho-Kyun; Lee, Kook Jin; Piao, Mingxing; Ko, Seung-Pil; Shin, Minju; Huh, Junghwan; Kim, Gyu-Tae
• Is Part Of: Physical chemistry chemical physics. Volume 19:Issue 20(2017)
• Page Start: 13133
• Page End: 13139
• Publication Date: 2017-05-10
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c7cp00589j
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : As a result of the TEOA doping process, the electrical performances of multilayer MoS2 FETs were enhanced at room temperature. Abstract : Chemical doping has been investigated as an alternative method of conventional ion implantation for two-dimensional materials. We herein report chemically doped multilayer molybdenum disulfide (MoS2 ) field effect transistors (FETs) through n-type channel doping, wherein triethanolamine (TEOA) is used as an n-type dopant. As a result of the TEOA doping process, the electrical performances of multilayer MoS2 FETs were enhanced at room temperature. Extracted field effect mobility was estimated to be ∼30 cm 2 V −1 s −1 after the surface doping process, which is 10 times higher than that of the pristine device. Subthreshold swing and contact resistance were also improved after the TEOA doping process. The enhancement of the subthreshold swing was demonstrated by using an independent FET model. Furthermore, we found that the doping level can be effectively controlled by the heat treatment method. These results demonstrate a promising material system that is easily controlled with high performance, while elucidating the underlying mechanism of improved electrical properties by the doping effect in a multilayered scheme.