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HARVARD Citation
Shang, J. et al. (2017). Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films. Nanoscale. 9 (21), pp. 7037-7046. [Online].
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Shang, J. et al. (2017). Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films. Nanoscale. 9 (21), pp. 7037-7046. [Online].