P‐78: Calibration of a‐InGaZnO Thin Film Transistors with Various Channel Lengths using TCAD Simulation. Issue 1 (May 2017)

• Record Type: Journal Article
• Authors: Tak, Nam-Kyun; Lee, Won-Seok; Kim, Sae-Han; Choi, In-Chol; Kim, Jin-Young; Han, Ji-Ung; Choi, Jin-Hyung; Hwang, Man-Gyu; Um, Jae Gwang; Lee, Suhui; Billah, Mohammad Masum; Jang, Jin
• Is Part Of: Digest of technical papers. Volume 48:Issue 1(2017)
• Page Start: 1536
• Page End: 1539
• Publication Date: 2017-05
• Subjects: a-IGZO Thin-Film Transistor -- TCAD simulation -- Density-of-states (DOS) -- Channel length -- Channel length reduction; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.11942
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We proposed the calibration procedure of a‐InGaZnO Thin Film Transistors (a‐IGZO TFTs) using Technology Computer Aided Design (TCAD) simulation. The various channel lengths of 5.2μm, 7.3μm, 30.3μm, 50.6μm, 81μm, and 152.2μm are fabricated and used for verifying the calibration results. The parameters of obtained from 152.2μm channel length TFT are applied to other devices with different channel lengths. From manufacturing point of view, we extracted the value of channel length reduction of TFTs from the output characteristics using TCAD simulation.