P‐20: Effects of N2O Plasma Treatment Time on the Performance of Self‐Aligned Top‐Gate amorphous oxide Thin Film Transistors. Issue 1 (May 2017)

• Record Type: Journal Article
• Authors: Liang, Ting; Zhang, Xiaodong; Zhou, Xiaoliang; Zhang, Letao; Lu, Huiling; Lu, Hongjuan; Zhang, Shengdong
• Is Part Of: Digest of technical papers. Volume 48:Issue 1(2017)
• Page Start: 1299
• Page End: 1302
• Publication Date: 2017-05
• Subjects: amorphous oxide TFTs -- self-aligned top-gate -- N2O plasma treatment time; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.11880
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We report on the effects of N2 O plasma treatment time on the performance of self‐aligned top‐gate amorphous oxide thin‐film transistors (TFTs). N2 O plasma is treated on the surface of the active layer. It is shown that the treatment effect is time‐dependent. With the increase of treatment time, the electrical characteristics and bias stress stability are improved significantly. However, adverse effects appear with the time prolonging due to the damage of excess plasma. The optimum performance of a IGZO and a‐IZO TFTs is obtained with the N2 O plasma treatment time at 90s and 240s, respectively.