P‐17: Mutual Interaction of Voltage between Top Gate and Bottom Gate for a‐IGZO TFT. Issue 1 (May 2017)
- Record Type:
- Journal Article
- Title:
- P‐17: Mutual Interaction of Voltage between Top Gate and Bottom Gate for a‐IGZO TFT. Issue 1 (May 2017)
- Main Title:
- P‐17: Mutual Interaction of Voltage between Top Gate and Bottom Gate for a‐IGZO TFT
- Authors:
- Gu, Pengfei
Chen, Jiangbo
Xie, Dini
Liu, Wei
Liu, Fengjuan
Sun, Hongda
Song, Young Suk
Yan, Liangchen
Wu, Zhongyuan - Abstract:
- Abstract : In this paper, the mutual interaction of gate voltage between top gate and bottom gate in a‐IGZO TFT was investigated. The Vth of top gate (or bottom gate) show a parallel shift with the change of bottom gate (or top gate) voltage. The magnitude of Vth shifts can be described by some approximate analytical expression.
- Is Part Of:
- Digest of technical papers. Volume 48:Issue 1(2017)
- Journal:
- Digest of technical papers
- Issue:
- Volume 48:Issue 1(2017)
- Issue Display:
- Volume 48, Issue 1 (2017)
- Year:
- 2017
- Volume:
- 48
- Issue:
- 1
- Issue Sort Value:
- 2017-0048-0001-0000
- Page Start:
- 1287
- Page End:
- 1290
- Publication Date:
- 2017-05
- Subjects:
- dual gate -- threshold voltage control -- mutual interaction of gate voltage -- analytical expression -- IGZO semiconductor -- thin-film transistor (TFT)
Information display systems -- Congresses
621.3815422 - Journal URLs:
- http://catalog.hathitrust.org/api/volumes/oclc/1799368.html ↗
http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2168-0159 ↗
http://ojps.aip.org/dbt/dbt.jsp?KEY=SIDSYM ↗
http://sid.aip.org/digest ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/sdtp.11874 ↗
- Languages:
- English
- ISSNs:
- 0097-966X
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8271.680000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 1788.xml